MICROWAVE HYPERABRUPT TUNING VARACTOR DIODES

Surface Mount Low Parasitic Package (SMLP)

FEATURES

  • Mesa Epitaxial Silicon Construction
  • Silicon Dioxide Passivated
  • Fits Footprint for SOD-323, SOD-123 and smaller
  • High Frequency (VHF to 8 GHz)
  • Available on Carrier and Reel
  • Available in Chip Form (add suffix -000)


SPECIFICATIONS

  • Reverse breakdown voltage (at 10 µA DC) at 25°C: 22 V min
  • Maximum reverse leakage current (at -20 V) at 25°C: 0.05 µA DC
  • Device dissipation (at 25°C): 250 mW (derated linearly to zero at +125°C)
  • Operating Junction temperature: -65° to +125°C
  • Storage temperature: -65° to +125°C

Model Number Diode Capacitance
CT (pF) at -0 V
Diode Capacitance
CT (pF) at -4 V
Diode Capacitance
CT (pF) at -20 V
Q min
at -4 V
(50 MHz)
typ min max min max
GVD92101-0XX 26.0 8.75 10.8 1.85 2.50 400
GVD92102-0XX 14.0 4.45 5.50 0.85 1.30 600
GVD92103-0XX 7.0 2.65 3.30 0.65 0.90 700
GVD92104-0XX 5.0 1.75 2.20 0.50 0.70 850
GVD92105-0XX 3.0 1.30 1.65 0.40 0.55 1000
GVD92106-0XX 2.0 0.85 1.10 0.30 0.45 1200



All dimensions are in/mm.
SMLP PACKAGE - consult factory for additional package configurations.


Varactor Diode Contents



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