MICROWAVE ABRUPT TUNING VARACTOR DIODES

Surface Mount Low Parasitic Package (SMLP)

FEATURES

  • Mesa Epitaxial Silicon Construction
  • Silicon Dioxide Passivated
  • Fits Footprint for SOD-323, SOD-123 and smaller
  • High Frequency (VHF to 8 GHz)
  • Available on Carrier and Reel
  • Available in Chip Form (add suffix -000)


SPECIFICATIONS

  • Reverse breakdown voltage (at 10 µA DC) at 25°C: 30 V min
  • Maximum reverse leakage current (at -25 V) at 25°C: 0.05 µA DC
  • Device dissipation (at 25°C): 250 mW (derated linearly to zero at +125°C)
  • Operating Junction temperature: -65° to +125°C
  • Storage temperature: -65° to +125°C

Model Number Capacitance
Ratio

CT (pF) at 0 V


CT (pF) at -4 V
min
Diode
Capacitance
CT (pF) at -4 V
(±10%)
Capacitance
Ratio

CT (pF) at -4 V


CT (pF) at -30 V
min
Q min
at -4 V
(50 MHz)
GVD91300-0XX 1.5 0.8 1.45 3900
GVD91301-0XX 1.6 1.0 1.55 3800
GVD91302-0XX 1.7 1.2 1.60 3700
GVD91303-0XX 1.8 1.5 1.65 3600
GVD91304-0XX 1.9 1.8 1.70 3500
GVD91305-0XX 2.0 2.2 1.75 3400
GVD91306-0XX 2.0 2.7 1.80 3300
GVD91307-0XX 2.1 3.3 1.85 3100
GVD91308-0XX 2.1 3.9 1.90 2700
GVD91309-0XX 2.2 4.7 1.95 2600
GVD91310-0XX 2.2 5.6 2.00 2500



All dimensions are in/mm.
SMLP PACKAGE - consult factory for additional package configurations.


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