SUPER HYPERABRUPT TUNING VARACTOR DIODES

Surface Mount Low Parasitic Package (SMLP)

FEATURES

  • Mesa Epitaxial Silicon Construction
  • Silicon Dioxide Passivated
  • Fits Footprint for SOD-323, SOD-123 and smaller
  • High Frequency (VHF to 8 GHz)
  • Available on Carrier and Reel
  • Available in Chip Form (add suffix -000)


SPECIFICATIONS

  • Reverse breakdown voltage (at 10 µA DC) at 25°C: 12 V min
  • Maximum reverse leakage current (at -10 V) at 25°C: 0.05 µA DC
  • Device dissipation (at 25°C): 250 mW (derated linearly to zero at +125°C)
  • Operating Junction temperature: -65° to +125°C
  • Storage temperature: -65° to +125°C
Model Number Diode Capacitance
CT (pF)
at -1 V
Diode Capacitance
CT (pF)
at -2.5 V
Diode Capacitance
CT (pF)
at -4 V
Diode Capacitance
CT (pF)
at -8 V
Q min
at -4 V
(50 MHz)
min min max max max
GVD90001-0XX 36.0 18.0 27.0 12.0 6.2 400
GVD90002-0XX 26.0 13.0 20.0 9.0 4.7 500
GVD90003-0XX 17.0 8.5 13.0 6.0 3.2 600
GVD90004-0XX 13.0 6.5 10.0 4.5 2.7 750
GVD90005-0XX 9.0 4.5 6.5 3.0 1.7 900
GVD90006-0XX 4.0 2.0 3.0 1.5 1.0 1200
GVD90007-0XX 1.8 1.1 1.5 0.8 0.55 1400
GVD90008-0XX 1.2 0.8 1.1 0.6 0.45 1600
GVD90009-0XX 0.6 0.5 0.8 0.4 0.35 1800



All dimensions are in/mm.
SMLP PACKAGE - consult factory for additional package configurations.


Varactor Diode Contents



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