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TUNING VARACTOR DIODES
Wide Band Hyperabrupt Tuning Varactor
Diodes
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FEATURES
- Mesa Epitaxial Silicon Construction
- Silicon Dioxide Passivated
- Superior Wide Range Linear
Characteristics
- High Tuning Ratios
- High Q
- Available in Common Cathode
Style
- Available in Chip Form (add
suffix -000)
SPECIFICATIONS
- Reverse breakdown voltage
(at 10 µA DC) at 25°C: 25 V min
- Maximum reverse leakage
current (at -20 V) at 25°C: 0.05 µA DC
- Device dissipation (at 25°C):
250 mW (derated linearly to zero at +125°C)
- Operating Junction temperature:
-55° to +125°C
- Storage temperature: -55°
to +125°C
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| Model Number |
Diode Capacitance
CT (pF)
at -3 V |
Diode Capacitance
CT (pF)
at -25 V |
Q min
at -4 V
(50 MHz) |
| Single |
Common Cathode |
min |
max |
min |
max |
| GVD30501-001 |
-- |
9.5 |
14.5 |
1.8 |
2.8 |
200 |
| GVD30502-001 |
-- |
9.5 |
14.5 |
1.8 |
2.8 |
750 |
| GVD30503-001 |
-- |
26.0 |
32.0 |
4.3 |
6.0 |
200 |
| GVD30504-001 |
-- |
26.0 |
32.0 |
4.3 |
6.0 |
500 |
All dimensions are in/mm.
SOT-23 PACKAGE - consult factory for additional package configurations.
Varactor Diode Contents
Super Hyperabrupt
Tuning Varactor Diodes, 12 Volts
- SOT-23 Package
- High Frequency, Surface Mount
Low Parasitic Package (SMLP)
Wideband
Hyperabrupt Tuning Varactor Diodes
- SOT-23 Package
- High Frequency, Surface Mount
Low Parasitic Package (SMLP)
- High Frequency, Surface Mount
Monolithic Package (SMMP)
Abrupt
Tuning Varactor Diodes
- SOT-23 Package
- High Frequency, SMLP
- Leaded Package
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