TUNING VARACTOR DIODES

Wide Band Hyperabrupt Tuning Varactor Diodes

FEATURES

  • Mesa Epitaxial Silicon Construction
  • Silicon Dioxide Passivated
  • Superior Wide Range Linear Characteristics
  • High Tuning Ratios
  • High Q
  • Available in Common Cathode Style
  • Available in Chip Form (add suffix -000)


SPECIFICATIONS

  • Reverse breakdown voltage (at 10 µA DC) at 25°C: 20 V min
  • Maximum reverse leakage current (at -20 V) at 25°C: 0.05 µA DC
  • Device dissipation (at 25°C): 250 mW (derated linearly to zero at +125°C)
  • Operating Junction temperature: -55° to +125°C
  • Storage temperature: -55° to +125°C

Model Number Diode Capacitance
CT (pF)
at -0 V
Diode Capacitance
CT (pF)
at -4 V
Diode Capacitance
CT (pF)
at -20 V
Q min
at -4 V
(50 MHz)
Single Common Cathode min min max min max
GVD30422-001 GVD30422-004 2.7 1.25 1.75 0.43 0.57 1000
GVD30432-001 GVD30432-004 4.2 1.70 2.50 0.52 0.72 850
GVD30442-001 GVD30442-004 6.3 2.20 3.80 0.68 0.96 700
GVD30452-001 GVD30452-004 11.9 3.70 5.50 0.94 1.30 600
GVD30462-001 GVD30462-004 26.0 9.00 11.0 1.90 2.50 400

All dimensions are in/mm.
SOT-23 PACKAGE - consult factory for additional package configurations.


Varactor Diode Contents



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