TUNING VARACTOR DIODES

Super Hyperabrupt Tuning Varactor Diodes

FEATURES

  • Mesa Epitaxial Silicon Construction
  • Silicon Dioxide Passivated
  • Superior Mid Range Linear Characteristics
  • High Tuning Ratios
  • High Q
  • Available in Common Cathode Style
  • Available in Chip Form (add suffix -000)


SPECIFICATIONS

  • Reverse breakdown voltage (at 10 µA DC) at 25°C: 12 V min
  • Maximum reverse leakage current (at -10 V) at 25°C: 0.05 µA DC
  • Device dissipation (at 25°C): 250 mW (derated linearly to zero at +125°C)
  • Operating Junction temperature: -55° to +125°C
  • Storage temperature: -55° to +125°C
Model Number Diode Capacitance
CT (pF)
at -1 V
Diode Capacitance
CT (pF)
at -2.5 V
Diode Capacitance
CT (pF)
at -4 V
Q min
at -4 V
(50 MHz)
Single Common Cathode min min max max
GVD20450-001 GVD20450-004 9.0 4.5 6.5 3.0 400

All dimensions are in/mm.
SOT-23 PACKAGE - consult factory for additional package configurations.


Varactor Diode Contents

Super Hyperabrupt Tuning Varactor Diodes, 12 Volts

Wideband Hyperabrupt Tuning Varactor Diodes

Abrupt Tuning Varactor Diodes



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