TUNING VARACTOR DIODES

Super Hyperabrupt Tuning Varactor Diodes

FEATURES

  • Mesa Epitaxial Silicon Construction
  • Silicon Dioxide Passivated
  • Superior Mid Range Linear Characteristics
  • High Tuning Ratios
  • High Q
  • Available in Common Cathode Style
  • Available in Chip Form (add suffix -000)


SPECIFICATIONS

  • Reverse breakdown voltage (at 10 µA DC) at 25°C: 12 V min
  • Maximum reverse leakage current (at -10 V) at 25°C: 0.05 µA DC
  • Device dissipation (at 25°C): 250 mW (derated linearly to zero at +125°C)
  • Operating Junction temperature: -55° to +125°C
  • Storage temperature: -55° to +125°C
Model Number Diode Capacitance
CT (pF)
at -1 V
Diode Capacitance
CT (pF)
at -2.5 V
Diode Capacitance
CT (pF)
at -8 V
Q min
at -4 V
(50 MHz)
Single Common Cathode min min max max
GVD20442-001 GVD20442-004 13.0 6.5 10.0 2.7 750
GVD20443-001 GVD20443-004 13.0 6.5 10.0 2.7 350
GVD20444-001 GVD20444-004 17.0 8.5 13.0 3.2 600
GVD20445-001 GVD20445-004 17.0 8.5 13.0 3.2 300
GVD20446-001 --- 26.0 13.0 20.0 4.7 500
GVD20447-001 --- 26.0 13.0 20.0 4.7 225
GVD20448-001 --- 36.0 18.0 27.0 6.2 400
GVD20449-001 --- 36.0 18.0 27.0 6.2 150

All dimensions are in/mm.
SOT-23 PACKAGE - consult factory for additional package configurations.


Varactor Diode Contents

Super Hyperabrupt Tuning Varactor Diodes, 12 Volts

Wideband Hyperabrupt Tuning Varactor Diodes

Abrupt Tuning Varactor Diodes



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