TUNING VARACTOR DIODES

Super Hyperabrupt Tuning Varactor Diodes

FEATURES

  • Mesa Epitaxial Silicon Construction
  • Silicon Dioxide Passivated
  • Superior Mid Range Linear Characteristics
  • High Tuning Ratios
  • High Q
  • Available in Common Cathode Style
  • Available in Chip Form (add suffix -000)


SPECIFICATIONS

  • Reverse breakdown voltage (at 10 µA DC) at 25°C: 12 V min
  • Maximum reverse leakage current (at -10 V) at 25°C: 0.05 µA DC
  • Device dissipation (at 25°C): 250 mW (derated linearly to zero at +125°C)
  • Operating Junction temperature: -55° to +125°C
  • Storage temperature: -55° to +125°C

FEATURES

  • Mesa Epitaxial Silicon Construction
  • Silicon Dioxide Passivated
  • Superior Mid Range Linear Characteristics
  • High Tuning Ratios
  • High Q
  • Available in Common Cathode Style
  • Available in Chip Form (add suffix -000)


SPECIFICATIONS

  • Reverse breakdown voltage (at 10 µA DC) at 25°C: 12 V min
  • Maximum reverse leakage current (at -10 V) at 25°C: 0.05 µA DC
  • Device dissipation (at 25°C): 250 mW (derated linearly to zero at +125°C)
  • Operating Junction temperature: -55° to +125°C
  • Storage temperature: -55° to +125°C

Model Number CT (pF)
at -1 V
Capacitance Ratio

CT (pF)
at -1 V


CT (pF)
at -3 V
Capacitance Ratio

CT (pF)
at -1 V


CT (pF)
at -6 V
Q min
at -4 V
(50 MHz)
Single Common Cathode min max min max min max
GVD20433-001 GVD20433-004 3.0 3.6 1.4 1.9 2.6 3.3 1500
GVD20434-001 GVD20434-004 5.85 7.15 1.6 2.0 2.8 3.4 1200
GVD20435-001 GVD20435-004 10.35 12.65 1.6 2.0 2.9 3.4 1000
GVD20436-001 GVD20436-004 15.50 18.50 1.6 2.0 3.0 3.5 900
GVD20437-001 --- 45.0 54.0 1.6 2.0 3.0 3.5 750

All dimensions are in/mm.
SOT-23 PACKAGE - consult factory for additional package configurations.


Varactor Diode Contents

Super Hyperabrupt Tuning Varactor Diodes, 12 Volts

Wideband Hyperabrupt Tuning Varactor Diodes

Abrupt Tuning Varactor Diodes



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