TUNING VARACTOR DIODES

Super Hyperabrupt Tuning Varactor Diodes

FEATURES

  • Mesa Epitaxial Silicon Construction
  • Silicon Dioxide Passivated
  • Superior Mid Range Linear Characteristics
  • High Tuning Ratios
  • High Q
  • Available in Chip Form (add suffix -000)


SPECIFICATIONS

  • Reverse breakdown voltage (at 10 µA DC) at 25°C: 12 V min
  • Maximum reverse leakage current (at -10 V) at 25°C: 0.05 µA DC
  • Device dissipation (at 25°C): 250 mW (derated linearly to zero at +125°C)
  • Operating Junction temperature: -55° to +125°C
  • Storage temperature: -55° to +125°C

Model Number
Diode Capacitance
CT (pF)
at -2 V
Diode Capacitance
CT (pF)
at -7 V
Diode Capacitance
CT (pF)
at -10 V
Q min
at -2 V
(10 MHz)
Single min max Typ min max
GVD1401-001 46 68 6.1 4.2 5.2 75
GVD1404-001 100 150 13.0 8.6 10.6 50

All dimensions are in/mm.
SOT-23 PACKAGE - consult factory for additional package configurations.


Varactor Diode Contents

Super Hyperabrupt Tuning Varactor Diodes, 12 Volts

Wideband Hyperabrupt Tuning Varactor Diodes

Abrupt Tuning Varactor Diodes



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