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TUNING VARACTOR DIODES
Super Hyperabrupt Tuning Varactor
Diodes
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FEATURES
- Mesa Epitaxial Silicon Construction
- Silicon Dioxide Passivated
- Superior Mid Range Linear
Characteristics
- High Tuning Ratios
- High Q
- Available in Chip Form (add
suffix -000)
SPECIFICATIONS
- Reverse breakdown voltage
(at 10 µA DC) at 25°C: 12 V min
- Maximum reverse leakage
current (at -10 V) at 25°C: 0.05 µA DC
- Device dissipation (at 25°C):
250 mW (derated linearly to zero at +125°C)
- Operating Junction temperature:
-55° to +125°C
- Storage temperature: -55°
to +125°C
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| Model Number |
Diode
Capacitance
CT (pF)
at -2 V
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Diode
Capacitance
CT (pF)
at -7 V
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Diode
Capacitance
CT (pF)
at -10 V
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Q min
at -2 V
(10 MHz)
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| Single |
min |
max |
Typ |
min |
max |
| GVD1401-001 |
46 |
68 |
6.1 |
4.2 |
5.2 |
75 |
| GVD1404-001 |
100 |
150 |
13.0 |
8.6 |
10.6 |
50 |
All dimensions are in/mm.
SOT-23 PACKAGE - consult factory for additional package configurations.
Varactor Diode Contents
Super Hyperabrupt
Tuning Varactor Diodes, 12 Volts
- SOT-23 Package
- High Frequency, Surface Mount
Low Parasitic Package (SMLP)
Wideband
Hyperabrupt Tuning Varactor Diodes
- SOT-23 Package
- High Frequency, Surface Mount
Low Parasitic Package (SMLP)
- High Frequency, Surface Mount
Monolithic Package (SMMP)
Abrupt Tuning
Varactor Diodes
- SOT-23 Package
- High Frequency, SMLP
- Leaded Package
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