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TUNING VARACTOR DIODES
High Q Abrupt Tuning Varactor Diodes
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FEATURES
- Mesa Epitaxial Silicon Construction
- Silicon Dioxide Passivated
- Economy Price
- Mil grade Performance
- High Q
- Available in Common Cathode
Style
- Available in Chip Form (add
suffix -000)
SPECIFICATIONS
- Reverse breakdown voltage
(at 10 µA DC) at 25°C: 30 V min
- Maximum reverse leakage
current (at -25 V) at 25°C: 0.05 µA DC
- Device dissipation (at 25°C):
250 mW (derated linearly to zero at +125°C)
- Operating Junction temperature:
-55° to +125°C
- Storage temperature: -55°
to +125°C
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| Model
Number |
CT
(pF)
at -4 V
(±10%) |
Capacitance
Ratio
CT at 0 V
CT at -30 V min |
Q min
at -4 V
(50 MHz) |
| Single |
Common Cathode |
| GVD1202-001 |
GVD1202-004 |
1.2 |
3.4 |
3200 |
| GVD1203-001 |
GVD1203-004 |
1.5 |
3.5 |
3000 |
| GVD1204-001 |
GVD1204-004 |
1.8 |
3.5 |
3000 |
| GVD1205-001 |
GVD1205-004 |
2.2 |
3.7 |
3000 |
| GVD1206-001 |
GVD1206-004 |
2.7 |
3.7 |
2500 |
| GVD1207-001 |
GVD1207-004 |
3.3 |
3.8 |
2500 |
| GVD1208-001 |
GVD1208-004 |
3.9 |
3.9 |
2500 |
| GVD1209-001 |
GVD1209-004 |
4.7 |
3.9 |
2000 |
| GVD1210-001 |
GVD1210-004 |
5.6 |
4.0 |
2000 |
| GVD1211-001 |
-- |
6.8 |
4.0 |
2000 |
| GVD1212-001 |
-- |
8.2 |
4.0 |
2000 |
| GVD1213-001 |
-- |
10.0 |
4.1 |
1800 |
| GVD1214-001 |
-- |
12.0 |
4.1 |
1600 |
| GVD1215-001 |
-- |
15.0 |
4.2 |
1250 |
| GVD1216-001 |
-- |
18.0 |
4.2 |
1000 |
| GVD1217-001 |
-- |
22.0 |
4.2 |
850 |
All dimensions are in/mm.
SOT-23 PACKAGE - consult factory for additional package configurations.
Varactor Diode Contents
Super Hyperabrupt
Tuning Varactor Diodes, 12 Volts
- SOT-23 Package
- High Frequency, Surface Mount
Low Parasitic Package (SMLP)
Wideband
Hyperabrupt Tuning Varactor Diodes
- SOT-23 Package
- High Frequency, Surface Mount
Low Parasitic Package (SMLP)
- High Frequency, Surface Mount
Monolithic Package (SMMP)
Abrupt
Tuning Varactor Diodes
- SOT-23 Package
- High Frequency, SMLP
- Leaded Package
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